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| ZXTN25060BFH 60V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC(cont) = 3.5A VCE(sat) < 65 mV @ 1A RCE(sat) = 43 m PD = 1.25W Complementary part number ZXTP25060BFH Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. C B Features * * * * High power dissipation SOT23 package High peak current Low saturation voltage 150V forward blocking voltage E E Applications * * * Lamp, relay and solenoid drivers General switching in automotive and industrial applications Motor drive and control C B Pinout - top view Ordering information Device ZXTN25060BFHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Device marking 019 Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25060BFH Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current (b) Peak pulse current Power dissipation at TA =25C (a) Linear derating factor Power dissipation at TA =25C (b) Linear derating factor Power dissipation at TA =25C (c) Linear derating factor Power dissipation at TA =25C (d) Linear derating factor Operating and storage temperature range Symbol VCBO VCEX VCEO VECO VEBO IC ICM PD Limit 150 150 60 6 7 3.5 10 0.73 5.84 PD 1.05 8.4 PD 1.25 9.6 PD 1.81 14.5 Tj, Tstg - 55 to 150 Unit V V V V V A A W mW/C W mW/C W mW/C W mW/C C Thermal resistance Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Junction to ambient (d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25060BFH Characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25060BFH ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Symbol BVCBO BVCEX BVCEO Min. 150 150 60 6 Typ. 190 190 80 8 V V Max. Unit V Conditions IC = 100 A IC = 100 A, RBE 1k -1V < VBE < 0.25V IC = 10mA (*) IE = 100 A, RBC 1k or 0.25V > VBC > -0.25V IE = 100 A, or Emitter-collector BVECX breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Emitter-base breakdown voltage Collector cut-off current Collector-emitter cut-off current Emitter cut-off current BVECO 6 7 V BVEBO ICBO ICEX IEBO 7 8 <1 <1 33 73 50 150 50 20 100 50 40 95 65 175 1050 950 300 V nA A nA nA mV mV mV mV mV mV IE = 100 A VCB = 120V VCB = 120V, Tamb= 100C VCE = 120V; RBE 1k -1V < VBE < 0.25V VEB = 5.6V IC = 0,5A, IB = 50mA (*) IC = 0,5A, IB = 10mA (*) IC = 1A, IB = 100mA (*) IC = 3.5A, IB = 350mA (*) IC = 3.5A, IB = 350mA (*) IC = 3.5A, VCE = 2V (*) IC = 10mA, VCE = 2V (*) IC = 1A, VCE = 2V (*) IC = 3.5A, VCE = 2V (*) or Collector-emitter saturation VCE(sat) voltage Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE 100 90 25 960 865 200 180 40 185 11.5 34 566 Transition frequency Output capacitance Turn-on time Turn-off time fT COBO t(on) t(off) MHz 20 pF ns ns 2%. IC = 100mA, VCE = 5V f = 100MHz VCB = 10V, f = 1MHz (*) VCC = 10V. IC = 500mA, IB1 = IB2= 50mA. NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25060BFH Typical characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25060BFH Package outline - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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